Detection of residual stress in multi-crystalline silicon wafers using swept-sne frequency response data [electronic resource] /

Detection of residual stress in multi-crystalline silicon wafers using swept-sne frequency response data [electronic resource] / Best, Shawn R. [Tampa, Fla.] : University of South Florida, 2005. eng ABSTRACT: This thesis presents audible vibratory mode data obtained by mechanically exciting acoustic modes in mc-Si wafers grown by EFG technique with various levels and distributions of residual stress. Stress maps obtained using scanning infrared polariscopy are presented, illustrating the variation of residual stress.Modal analyses of the wafers are performed using the finite element method and are in remarkably good agreement with the measured frequency response data. The calculated mode shapes were further validated through classic Chladni type patterns.The vibratory data is found to correlate with the residual stress measurements. The data is fit with both linear and quadratic models with correlation coefficients of 0.8. The results reveal a dependence of wafer audible mode frequencies on residual stress level that may be useful for solar cell mechanical quality control and breakage inspection. Thesis (M.S.M.E.)--University of South Florida, 2005. Includes bibliographical references. Text (Electronic thesis) in PDF format. System requirements: World Wide Web browser and PDF reader. Mode of access: World Wide Web. ABSTRACT: This thesis presents audible vibratory mode data obtained by mechanically exciting acoustic modes in mc-Si wafers grown by EFG technique with various levels and distributions of residual stress. Stress maps obtained using scanning infrared polariscopy are presented, illustrating the variation of residual stress.Modal analyses of the wafers are performed using the finite element method and are in remarkably good agreement with the measured frequency response data. The calculated mode shapes were further validated through classic Chladni type patterns.The vibratory data is found to correlate with the residual stress measurements. The data is fit with both linear and quadratic models with correlation coefficients of 0.8. The results reveal a dependence of wafer audible mode frequencies on residual stress level that may be useful for solar cell mechanical quality control and breakage inspection. Adviser: Dr. Daniel P. Hess. Audible. Modes. Resonance. Photovoltaic. Rectangular.

Detection of residual stress in multi-crystalline silicon wafers using swept-sne frequency response data [electronic resource] /

Best, Shawn R.

[Tampa, Fla.] : University of South Florida,

2005.

eng

ABSTRACT: This thesis presents audible vibratory mode data obtained by mechanically exciting acoustic modes in mc-Si wafers grown by EFG technique with various levels and distributions of residual stress. Stress maps obtained using scanning infrared polariscopy are presented, illustrating the variation of residual stress.Modal analyses of the wafers are performed using the finite element method and are in remarkably good agreement with the measured frequency response data. The calculated mode shapes were further validated through classic Chladni type patterns.The vibratory data is found to correlate with the residual stress measurements. The data is fit with both linear and quadratic models with correlation coefficients of 0.8. The results reveal a dependence of wafer audible mode frequencies on residual stress level that may be useful for solar cell mechanical quality control and breakage inspection.

Thesis (M.S.M.E.)--University of South Florida, 2005.

Includes bibliographical references.

Text (Electronic thesis) in PDF format.

System requirements: World Wide Web browser and PDF reader.

Mode of access: World Wide Web.

ABSTRACT: This thesis presents audible vibratory mode data obtained by mechanically exciting acoustic modes in mc-Si wafers grown by EFG technique with various levels and distributions of residual stress. Stress maps obtained using scanning infrared polariscopy are presented, illustrating the variation of residual stress.Modal analyses of the wafers are performed using the finite element method and are in remarkably good agreement with the measured frequency response data. The calculated mode shapes were further validated through classic Chladni type patterns.The vibratory data is found to correlate with the residual stress measurements. The data is fit with both linear and quadratic models with correlation coefficients of 0.8. The results reveal a dependence of wafer audible mode frequencies on residual stress level that may be useful for solar cell mechanical quality control and breakage inspection.

Adviser: Dr. Daniel P. Hess.

Audible.

Modes.

Resonance.

Photovoltaic.

Rectangular.