Design, fabrication and characterization of thin-film M-I-M diodes for rectenna array [electronic resource] / Krishnan, Subramanian, 1978- [Tampa, Fla.] : University of South Florida, 2004. eng ABSTRACT: A Metal-Insulator-Metal (MIM) diode is a high frequency device used for energy harvesting purpose in the RECTENNA. The main objective of this thesis work is to design, fabricate and characterize a thin-film MIM diode. A key issue associated in this research work is the development MIM diode with nanometer thin insulator region. The reason for the development of MIM diode is to rectify a wide spectrum of AC signal to usable DC power. In this thesis work, a planar MIM diode with Aluminum/Aluminum-Oxide/Gold has been fabricated. The thickness of the insulator region obtained was about 3nm. The Metal and insulator depositions were done by sputtering and plasma oxidation, respectively. I-V Characteristics of the diode was measured by making use of in-house set-up and 70% of the devices on a single wafer yielded with better result. ABSTRACT: Most of the I-V curves obtained were highly non-linear and asymmetric. Based on the I-V measurement, the logarithmic derivative of I vs. V was plotted and the tunneling behavior was also observed. Thesis (M.S.E.E.)--University of South Florida, 2004. Includes bibliographical references. Text (Electronic thesis) in PDF format. System requirements: World Wide Web browser and PDF reader. Mode of access: World Wide Web. ABSTRACT: A Metal-Insulator-Metal (MIM) diode is a high frequency device used for energy harvesting purpose in the RECTENNA. The main objective of this thesis work is to design, fabricate and characterize a thin-film MIM diode. A key issue associated in this research work is the development MIM diode with nanometer thin insulator region. The reason for the development of MIM diode is to rectify a wide spectrum of AC signal to usable DC power. In this thesis work, a planar MIM diode with Aluminum/Aluminum-Oxide/Gold has been fabricated. The thickness of the insulator region obtained was about 3nm. The Metal and insulator depositions were done by sputtering and plasma oxidation, respectively. I-V Characteristics of the diode was measured by making use of in-house set-up and 70% of the devices on a single wafer yielded with better result. ABSTRACT: Most of the I-V curves obtained were highly non-linear and asymmetric. Based on the I-V measurement, the logarithmic derivative of I vs. V was plotted and the tunneling behavior was also observed. Adviser: Elias K. Stefanakos. Co-adviser: Shekhar Bhansali. I-V Characteristics of MIM. thin-film insulator. solar energy conversion. MIM. rectenna.
Design, fabrication and characterization of thin-film M-I-M diodes for rectenna array [electronic resource] /
Krishnan, Subramanian, 1978-
[Tampa, Fla.] : University of South Florida,
2004.
eng
ABSTRACT: A Metal-Insulator-Metal (MIM) diode is a high frequency device used for energy harvesting purpose in the RECTENNA. The main objective of this thesis work is to design, fabricate and characterize a thin-film MIM diode. A key issue associated in this research work is the development MIM diode with nanometer thin insulator region. The reason for the development of MIM diode is to rectify a wide spectrum of AC signal to usable DC power. In this thesis work, a planar MIM diode with Aluminum/Aluminum-Oxide/Gold has been fabricated. The thickness of the insulator region obtained was about 3nm. The Metal and insulator depositions were done by sputtering and plasma oxidation, respectively. I-V Characteristics of the diode was measured by making use of in-house set-up and 70% of the devices on a single wafer yielded with better result.
ABSTRACT: Most of the I-V curves obtained were highly non-linear and asymmetric. Based on the I-V measurement, the logarithmic derivative of I vs. V was plotted and the tunneling behavior was also observed.
Thesis (M.S.E.E.)--University of South Florida, 2004.
Includes bibliographical references.
Text (Electronic thesis) in PDF format.
System requirements: World Wide Web browser and PDF reader.
Mode of access: World Wide Web.
ABSTRACT: A Metal-Insulator-Metal (MIM) diode is a high frequency device used for energy harvesting purpose in the RECTENNA. The main objective of this thesis work is to design, fabricate and characterize a thin-film MIM diode. A key issue associated in this research work is the development MIM diode with nanometer thin insulator region. The reason for the development of MIM diode is to rectify a wide spectrum of AC signal to usable DC power. In this thesis work, a planar MIM diode with Aluminum/Aluminum-Oxide/Gold has been fabricated. The thickness of the insulator region obtained was about 3nm. The Metal and insulator depositions were done by sputtering and plasma oxidation, respectively. I-V Characteristics of the diode was measured by making use of in-house set-up and 70% of the devices on a single wafer yielded with better result.
ABSTRACT: Most of the I-V curves obtained were highly non-linear and asymmetric. Based on the I-V measurement, the logarithmic derivative of I vs. V was plotted and the tunneling behavior was also observed.
Adviser: Elias K. Stefanakos.
Co-adviser: Shekhar Bhansali.
I-V Characteristics of MIM.
thin-film insulator.
solar energy conversion.
MIM.
rectenna.